K7S3236U4C Datasheet, PDF (13/20 Pages) Samsung semiconductor – 1Mx36 & 2Mx18 QDR II+ b4 SRAM

K7S3236U4C
K7S3218U4C
1Mx36 & 2Mx18 QDR^TM II+ b4 SRAM
THERMAL RESISTANCE
PRMETER
SYMBOL
TYP
Unit
NOTES
Junction to Ambient
θJA
20.8
°C/W
Junction to Case
θJC
2.3
°C/W
Junction to Pins
θJB
4.3
°C/W
Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
thermal impedance. TJ=TA + PD x θJA
PIN CAPACITANCE
PRMETER
Address Control Input Capacitance
Input and Output Capacitance
Clock Capacitance
SYMBOL
CIN
COUT
CCLK
Note: 1. Parameters are tested with RQ=250Ω and VDDQ=1.5V.
2. Periodically sampled and not 100% tested.
TESTCONDITION
VIN=0V
VOUT=0V
-
TYP
MAX
Unit NOTES
3.5
4
pF
4
5
pF
3
4
pF
AC TEST CONDITIONS
Parameter
Core Power Supply Voltage
Output Power Supply Voltage
Input High/Low Level
Input Reference Level
Input Rise/Fall Time
Output Timing Reference Level
Symbol
VDD
VDDQ
VIH/VIL
VREF
TR/TF
Note: Parameters are tested with RQ=250Ω
Value
1.7~1.9
1.4~1.6
1.25/0.25
0.75
0.3/0.3
VDDQ/2
AC TEST OUTPUT LOAD
Unit
V
VREF ^0.75V
VDDQ/2
V
V
SRAM
V
50Ω
Zo=50Ω
ns
250Ω
ZQ
V
Rev. 1.0 August 2008
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