K4H511638B-G Datasheet, PDF (13/24 Pages) Samsung semiconductor – 512Mb B-die DDR SDRAM Specification

DDR SDRAM 512Mb B-die (x4, x8, x16)
DDR SDRAM
15.0 DDR SDRAM IDD spec table
(V_DD=2.7V, T = 10°C)
Symbol
64Mx4 (K4H510438B)
Unit Notes
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
IDD0
165
125
110
110
mA
IDD1
185
150
135
135
mA
IDD2P
5
5
5
5
mA
IDD2F
30
30
30
30
mA
IDD2Q
25
25
25
25
mA
IDD3P
55
30
30
30
mA
IDD3N
95
50
50
50
mA
IDD4R
200
180
150
150
mA
IDD4W
240
185
155
155
mA
IDD5
265
250
240
240
mA
Normal
5
5
5
5
mA
IDD6
Low power
3
3
3
3
mA Optional
IDD7A
430
390
340
340
mA
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
64Mx8 (K4H510838B)
Unit Notes
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
165
125
110
110
mA
185
150
135
135
mA
5
5
5
5
mA
30
30
30
30
mA
25
25
25
25
mA
55
30
30
30
mA
95
50
50
50
mA
200
180
150
150
mA
240
185
155
155
mA
265
250
240
240
mA
5
5
5
5
mA
3
3
3
3
mA Optional
430
390
340
340
mA
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
32Mx16 (K4H511638B)
Unit Notes
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
165
125
110
110
mA
190
155
140
140
mA
5
5
5
5
mA
30
30
30
30
mA
25
25
25
25
mA
55
30
30
30
mA
100
50
50
50
mA
230
195
170
170
mA
280
215
190
190
mA
265
250
240
240
mA
5
5
5
5
mA
3
3
3
3
mA Optional
450
405
360
360
mA
Rev. 1.3 June. 2005