S3P9228 Datasheet, PDF (126/462 Pages) Samsung semiconductor – 8-BIT CMOS MICROCONTROLLERS USERS MANUAL

SAM88RI INSTRUCTION SET
S3C9228/P9228
LDC/LDE — Load Memory
LDC/LDE
Examples:
(Continued)
Given: R0 = 11H, R1 = 34H, R2 = 01H, R3 = 04H, R4 = 00H, R5 = 60H; Program memory
locations 0061 = AAH, 0103H = 4FH, 0104H = 1A, 0105H = 6DH, and 1104H = 88H. External
data memory locations 0061H = BBH, 0103H = 5FH, 0104H = 2AH, 0105H = 7DH, and
1104H = 98H:
LDC
LDE
LDC *
R0,@RR2
R0,@RR2
@RR2,R0
LDE
@RR2,R0
LDC
R0,#01H[RR4]
LDE
R0,#01H[RR4]
LDC ^(note) #01H[RR4],R0
LDE
#01H[RR4],R0
LDC
R0,#1000H[RR2]
LDE
R0,#1000H[RR2]
LDC
R0,1104H
LDE
R0,1104H
LDC ^(note) 1105H,R0
LDE
1105H,R0
; R0 ¨ contents of program memory location 0104H
; R0 = 1AH, R2 = 01H, R3 = 04H
; R0 ¨ contents of external data memory location 0104H
; R0 = 2AH, R2 = 01H, R3 = 04H
; 11H (contents of R0) is loaded into program memory
; location 0104H (RR2),
; working registers R0, R2, R3 Æ no change
; 11H (contents of R0) is loaded into external data memory
; location 0104H (RR2),
; working registers R0, R2, R3 Æ no change
; R0 ¨ contents of program memory location 0061H
; (01H + RR4),
; R0 = AAH, R2 = 00H, R3 = 60H
; R0 ¨ contents of external data memory location 0061H
; (01H + RR4), R0 = BBH, R4 = 00H, R5 = 60H
; 11H (contents of R0) is loaded into program memory
; location 0061H (01H + 0060H)
; 11H (contents of R0) is loaded into external data memory
; location 0061H (01H + 0060H)
; R0 ¨ contents of program memory location 1104H
; (1000H + 0104H), R0 = 88H, R2 = 01H, R3 = 04H
; R0 ¨ contents of external data memory location 1104H
; (1000H + 0104H), R0 = 98H, R2 = 01H, R3 = 04H
; R0 ¨ contents of program memory location 1104H,
; R0 = 88H
; R0 ¨ contents of external data memory location 1104H,
; R0 = 98H
; 11H (contents of R0) is loaded into program memory
; location 1105H, (1105H) ¨ 11H
; 11H (contents of R0) is loaded into external data memory
; location 1105H, (1105H) ¨ 11H
NOTE: These instructions are not supported by masked ROM type devices.
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