K4H2G0638A-UC Datasheet, PDF (12/23 Pages) Samsung semiconductor – Stacked 2Gb A-die SDRAM Specification

DDR SDRAM stacked 2Gb A-die (x4)
Preliminary
DDR SDRAM
15.0 DDR SDRAM IDD spec table
(V_DD=2.7V, T = 10°C)
Symbol
st. 512Mx4 (K4H2G0638A)
Unit Notes
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
IDD0
160
150
130
130
mA
IDD1
180
170
150
150
mA
IDD2P
30
30
30
30
mA
IDD2F
70
70
60
60
mA
IDD2Q
60
60
50
50
mA
IDD3P
45
45
45
45
mA
IDD3N
105
105
95
95
mA
IDD4R
240
210
190
190
mA
IDD4W
240
210
190
190
mA
IDD5
290
280
260
260
mA
Normal
30
30
30
30
mA
IDD6
Low power
10
10
10
10
mA Optional
IDD7A
430
400
370
370
mA
15.1 Current Calculation table
1st Comp. Condition(Active)
2nd Comp. Condition(Standby)
IDD0
IDD2F
IDD1
IDD2F
IDD2P
IDD2P
IDD2F
IDD2F
IDD2Q
IDD2Q
IDD3P
IDD2P
IDD3N
IDD2F
IDD4R
IDD3N
IDD4W
IDD3N
IDD5
IDD2F
IDD6
IDD6
IDD7A
IDD3N
Rev. 0.0 June. 2005