K7N163631B Datasheet, PDF (11/24 Pages) Samsung semiconductor – 512Kx36 & 1Mx18 Pipelined NtRAM

K7N163631B
K7N161831B
Preliminary
512Kx36 & 1Mx18 Pipelined NtRAM^TM
ASYNCHRONOUS TRUTH TABLE
OPERATION
Sleep Mode
Read
Write
Deselected
ZZ OE I/O STATUS
H
X
High-Z
L
L
DQ
L
H
High-Z
L
X Din, High-Z
L
X
High-Z
Notes
1. X means "Don′t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 4.6
V
Voltage on Any Other Pin Relative to VSS
VIN
-0.3 to VDD+0.3
V
Power Dissipation
PD
1.6
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
Commercial
TOPR
0 to 70
°C
Industrial
TOPR
-40 to 85
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
*Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS (0°C ≤ TA ≤ 70°C)
PARAMETER
Supply Voltage
Ground
SYMBOL
VDD1
VDDQ1
VDD2
VDDQ2
VSS
MIN
2.375
2.375
3.135
3.135
0
Notes: 1. The above parameters are also guaranteed at industrial temperature range.
2. It should be VDDQ ≤ VDD
Typ.
2.5
2.5
3.3
3.3
0
MAX
2.625
2.625
3.465
3.465
0
UNIT
V
V
V
V
V
CAPACITANCE*(TA=25°C, f=1MHz)
PARAMETER
SYMBOL
TEST CONDITION
MIN
Input Capacitance
CIN
VIN=0V
-
Output Capacitance
COUT
VOUT=0V
-
*Note : Sampled not 100% tested.
VIH
MAX
TBD
TBD
UNIT
pF
pF
VSS
VSS-1.0V
20% tCYC(MIN)
- 11 -
Jan. 2005
Rev 0.4