K7N163631B Datasheet, PDF (1/24 Pages) Samsung semiconductor – 512Kx36 & 1Mx18 Pipelined NtRAM

K7N163631B
K7N161831B
Preliminary
512Kx36 & 1Mx18 Pipelined NtRAM^TM
Document Title
512Kx36 & 1Mx18-Bit Pipelined NtRAM^TM
Revision History
Rev. No.
History
0.0
1. Initial document.
0.1
1. Update the current spec(Icc, ISB)
0.2
1. Change the ISB,ISB1,ISB2
- ISB ; from 120mA to 170mA
- ISB1 ; from 80mA to 150mA
- ISB2 ; from 80mA to 130mA
0.3
1. Remove the 1.8V Vdd voltage level
0.4
1. Remove the -20 and -13 speed bin
Draft Date
Mar. 23, 2004
May. 13, 2004
Sep. 21. 2004
Remark
Advance
Preliminary
Preliminary
Oct. 18, 2004
Jan. 04, 2005
Preliminary
Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Jan. 2005
Rev 0.4