K9WAG08U1M Datasheet, PDF (10/49 Pages) Samsung semiconductor – 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory

K9WAG08U1M
K9K8G08U0M
Preliminary
FLASH MEMORY
Memory Map
K9K8G08U0M is arranged in four 2Gb memory planes. Each plane contains 2,048 blocks and 2112 byte page registers. This allows it
to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that two-plane program/erase operations can be executed by dividing the memory array into plane 0~1 or plane 2~3
separately.
For example, two-plane program/erase operation into plane 0 and plane 2 is prohibited. That is to say, two-plane program/erase oper-
ation into plane 0 and plane 1 or into plane 2 and plane 3 is allowed
Plane 0
(2048 Block)
Block 0
Page 0
Page 1
Page 62
Page 63
Block 2
Page 0
Page 1
Page 62
Page 63
Plane 1
(2048 Block)
Block 1
Page 0
Page 1
Page 62
Page 63
Block 3
Page 0
Page 1
Page 62
Page 63
Plane 2
(2048 Block)
Block 4096
Page 0
Page 1
Page 62
Page 63
Block 4098
Page 0
Page 1
Page 62
Page 63
Plane 3
(2048 Block)
Block 4097
Page 0
Page 1
Page 62
Page 63
Block 4099
Page 0
Page 1
Page 62
Page 63
Block 4092
Page 0
Page 1
Page 62
Page 63
Block 4094
Page 0
Page 1
Page 62
Page 63
2112byte Page Registers
Block 4093
Page 0
Page 1
Page 62
Page 63
Block 4095
Page 0
Page 1
Page 62
Page 63
2112byte Page Registers
Block 8188
Page 0
Page 1
Page 62
Page 63
Block 8190
Page 0
Page 1
Page 62
Page 63
2112byte Page Registers
Block 8189
Page 0
Page 1
Page 62
Page 63
Block 8191
Page 0
Page 1
Page 62
Page 63
2112byte Page Registers
10