K4S643232H Datasheet, PDF (10/12 Pages) Samsung semiconductor – 64Mb H-die (x32) SDRAM Specification

SDRAM 64Mb H-die (x32)
AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C)
Parameter
Value
AC input levels (Vih/Vil)
2.4/0.4
Input timing measurement reference level
1.4
Input rise and fall time
tr/tf = 1/1
Output timing measurement reference level
1.4
Output load condition
See Fig. 2
3.3V
Output
870Ω
1200Ω
30pF
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
Output
CMOS SDRAM
Unit
V
V
ns
V
Z0 = 50Ω
Vtt = 1.4V
50Ω
30pF
(Fig. 1) DC output load circuit
(Fig. 2) AC output load circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Symbol
CLK cycle time
CAS
tCC
CAS
Row active to row active delay
RAS to CAS delay
Row precharge time
Row active time
Row cycle time
tRRD(min)
tRCD(min)
tRP(min)
tRAS(min)
tRAS(max)
tRC(min)
Last data in to row precharge
tRDL(min)
Last data in to new col.address delay tCDL(min)
Last data in to burst stop
tBDL(min)
Col. address to col. address delay
tCCD(min)
Mode Register Set cycle time
tMRS(min)
Number of valid
output data
CAS Latency=3
CAS Latency=2
50
Min Max
5
1000
10
3
2
3
2
8
5
11
7
55
60
Min Max Min Max
5.5
6
1000
1000
10
10
2
3
2
3
2
3
2
3
2
7
5
7
5
100
10
7
10
7
2
1
1
1
2
2
1
70
Min Max
7
1000
10
3
2
3
2
7
5
10
7
Unit
ns
CLK
CLK
CLK
CLK
us
CLK
CLK
CLK
CLK
CLK
CLK
ea
Note
1
1
1
1
1
1
2
2
2
3
4
Note : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then
rounding off to the next higher integer. Refer to the following ns-unit based AC table.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
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Rev. 1.4 August 2004