K4S561632C Datasheet, PDF (10/11 Pages) Samsung semiconductor – 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM

K4S561632C
VDD Clamp @ CLK, CKE, CS, DQM & DQ
VDD (V)
I (mA)
0.0
0.0
0.2
0.0
0.4
0.0
0.6
0.0
0.7
0.0
0.8
0.0
0.9
0.0
1.0
0.23
1.2
1.34
1.4
3.02
1.6
5.06
1.8
7.35
2.0
9.83
2.2
12.48
2.4
15.30
2.6
18.31
VSS Clamp @ CLK, CKE, CS, DQM & DQ
VSS (V)
I (mA)
-2.6
-57.23
-2.4
-45.77
-2.2
-38.26
-2.0
-31.22
-1.8
-24.58
-1.6
-18.37
-1.4
-12.56
-1.2
-7.57
-1.0
-3.37
-0.9
-1.75
-0.8
-0.58
-0.7
-0.05
-0.6
0.0
-0.4
0.0
-0.2
0.0
0.0
0.0
CMOS SDRAM
Minimum VDD clamp current
(Referenced to VDD)
20
15
10
5
0
0
1
2
3
Voltage
I (mA)
Minimum VSS clamp current
-3
-2
-1
0
0
-10
-20
-30
-40
-50
-60
Voltage
I (mA)
Rev. 0.4 Sept. 2001