K9F2808Q0C Datasheet, PDF (1/33 Pages) Samsung semiconductor – 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory

K9F2808Q0C-DCB0,DIB0 K9F2816Q0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0
K9F2808U0C-YCB0,YIB0 K9F2816U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0 K9F2816U0C-DCB0,DIB0
FLASH MEMORY
Document Title
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
Initial issue.
1.0
TBGA PKG Dimension Change
48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm
2.0
1.A3 Pin assignment of TBGA Package is changed.(Page 4)
(before) NC --> (after) Vss
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32)
3. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 33)
2.1
The min. Vcc value 1.8V devices is changed.
K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Draft Date
Apr. 15th 2002
Sep. 5th 2002
Dec.10th 2002
Mar. 6th 2003
Pb-free Package is added.
2.2
K9F2808U0C-FCB0,FIB0
K9F2808Q0C-HCB0,HIB0
K9F2816U0C-HCB0,HIB0
K9F2816U0C-PCB0,PIB0
K9F2816Q0C-HCB0,HIB0
K9F2808U0C-HCB0,HIB0
K9F2808U0C-PCB0,PIB0
Mar. 13rd 2003
Some AC parameter is changed(K9F28XXQ0C).
2.3
tWC tWH tWP tRC tREH tRP tREA tCEA
Before 45 15 25 50 15 25 30 45
After 60 20 40 60 20 40 40 55
Mar. 26th 2003
2.4
New definition of the number of invalid blocks is added.
May. 24th 2003
(Minimum 502 valid blocks are guaranteed for each contiguous 64Mb
memory space)
Remark
Advance
Advance
Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1