K9F1208R0B Datasheet, PDF (1/45 Pages) Samsung semiconductor – 64M x 8 Bit NAND Flash Memory

K9F1208R0B
K9F1208B0B
K9F1208U0B
Document Title
64M x 8 Bit NAND Flash Memory
Preliminary
FLASH MEMORY
Revision History
Revision No. History
Draft Date
0.0
Initial issue.
Apr. 24th 2004
0.1
1. Note 1 ( Program/Erase Characteristics) is added( page 14 )
Oct. 11th.2004
2. NAND Flash Technical Notes is changed.
-Invalid block -> initial invalid block ( page 16 )
-Error in write or read operation ( page 17 )
-Program Flow Chart ( page 17 )
3. Vcc range is changed
-2.4V~2.9V -> 2.5V~2.9V
-1.7V~1.95V ->1.65V~1.95V
4. Multi plane operation and Copy-Back Program are not supported with 1.8V
device.
Remark
Advance
Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
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