K7R643684M Datasheet, PDF (1/18 Pages) Samsung semiconductor – 2Mx36 & 4Mx18 QDRTM II b4 SRAM

K7R643684M
K7R641884M
Document Title
2Mx36-bit, 4Mx18-bit QDR^TM II b4 SRAM
Preliminary
2Mx36 & 4Mx18 QDR^TM II b4 SRAM
Revision History
Rev. No.
History
0.0
1. Initial document.
0.1
1. Update AC timing characteristics.
2. Change the JTAG instruction coding.
0.2
1. Change the AC timing characteristics. (-25/-20 parts)
2. Correct the overshoot and undershoot timing diagrams.
3. Change the JTAG Block diagrams.
4. Update the Boundary scan exit order.
0.3
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
0.4
1. Add the Power-on Sequence specification
0.5
1. Correct the pin name table
Draft Date
Sep 14, 2002
Oct. 24, 2002
Feb. 18, 2003
Remark
Advance
Preliminary
Preliminary
Mar. 20, 2003
Aug. 16, 2004
Oct. 18, 2004
Preliminary
Preliminary
Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Oct. 2004
Rev 0.5