K7R643682M Datasheet, PDF (1/19 Pages) Samsung semiconductor – 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM

K7R643682M
K7R641882M
K7R640982M
Preliminary
2Mx36 & 4Mx18 & 8Mx9 QDR^TM II b2 SRAM
Document Title
2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDR^TM II b2 SRAM
Revision History
Rev. No.
History
0.0
1. Initial document.
0.1
1. Update AC timing characteristics.
2. Change the JTAG instruction coding.
0.2
1. Change the AC timing characteristics. (-25/-20 parts)
2. Correct the overshoot and undershoot timing diagrams.
3. Change the JTAG Block diagrams.
4. Update the Boundary scan exit order.
0.3
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
0.4
1. Add the Power-on Sequence specification
0.5
1. Correct the pin name table
Draft Date
Sep, 14 2002
Oct. 24, 2002
Remark
Advance
Preliminary
Feb. 18, 2003
Preliminary
Mar. 20, 2003
Preliminary
Aug. 16, 2004
Oct. 18, 2004
Preliminary
Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Oct. 2004
Rev 0.5