K7Q163652A Datasheet, PDF (1/17 Pages) Samsung semiconductor – 512Kx36 & 1Mx18 QDRTM b2 SRAM

K7Q163652A
K7Q161852A
512Kx36 & 1Mx18 QDR^TM b2 SRAM
Document Title
512Kx36-bit, 1Mx18-bit QDR^TM SRAM
Revision History
Rev. No.
History
0.0
1. Initial document.
0.1
1. Amendment
1) Page 3,4 PIN NAME DESCRIPTION
W (4A) : from Read Control Pin to Write Control
R (8A) : from Write Control Pin to Read Control
BW0(7B),BW1(7A),BW2(5A),BW3(5B) :
from Read Control Pin to Byte Wrtie Control
2) Page 7 STATE DIAGRAM
from LEAD NOP to READ NOP
0.2
1. Amendment
1) Page 8 WRITE TRUTH TABLE(x36)
BW2,BW3 values for WRITE ALL BYTEs( K↑ ) and
WRITE ALLBYTEs( K↑ ) : from "H" to " L"
2) Page 13 TIMING WAVE FORMS Note 2 supplement
0.3
1. 1.8V I/O supply voltage addition
1) Page 2 FEATURES
2) Page 3,4 PIN NAME VDDQ
3) Page 10, OPERATING CONTITIONS
4) Page 11 AC TEST CONTITIONS
2. Amendment
1) Page 15 BOUNDARY SCAN ORDER EXIT
0.4
1. Icc, Isb addition
2. 1.8V Vddq addition
0.5
1. Reserved pin for high density name change from NC to Vss/SA
1.0
1. Final SPEC release
2. Modify thermal resistance
Draft Date
April, 30, 2001
May, 13, 2001
Remark
Advance
Advance
May, 26, 2001
Advance
June, 11, 2001
Advance
Sep,03, 2001
Nov, 30, 2001
July, 03. 2002
Advance
Preliminary
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
July 2002
Rev 1.0