K7Q161882 Datasheet, PDF (1/17 Pages) Samsung semiconductor – 512Kx36 & 1Mx18 QDR b2 SRAM

K7Q163682A
K7Q161882A
512Kx36 & 1Mx18 QDR^TM b2 SRAM
Document Title
512Kx36-bit, 1Mx18-bit QDR^TM SRAM
Revision History
Rev. No.
History
0.0
1. Initial document.
0.1
1. Icc, Isb addition
2. 1.8V Vddq addition
3. Speed bin change
0.2
1. Changed Pin configuration at x36 organization.
- 9F ; from Q14 to D14 .
- 10F ; from D14 to Q14 .
2. Reserved pin for high density name change from NC to Vss/SA
1.0
1. Final SPEC release
2. Modify thermal resistance
Draft Date
May, 22 2001
Remark
Advance
Sep,03 2001
Advance
Nov. 20. 2001
Preliminary
July, 03. 2002
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
July 2002
Rev 1.0