K7P163666A Datasheet, PDF (1/14 Pages) Samsung semiconductor – 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM

K7P163666A
K7P161866A
Document Title
512Kx36 & 1Mx18 Synchronous Pipelined SRAM
512Kx36 & 1Mx18 SRAM
Revision History
Rev. No.
Rev. 0.0
History
- Initial Document
Rev. 0.1
- Absolute maximum ratings are changed
VDD : 2.815 - > 3.13
VDDQ : 2.815 - > 2.4
VTERM : 2.815 - > VDDQ+0.5 (2.4V MAX)
- Recommended DC operating conditions are changed
VREF / VCM-CLK : 0.68 - > 0.6, 0.95 - > 0.9
- DC characteristics is changed
ISBZZ : 150 - > 128
- AC Characteristics are changed
TAVKH / TDVKH / TWVKH / TSVKH : 0.4 / 0.5 / 0.5 - > 0.3 / 0.3 / 0.3
TKHAX / TKHDX / TKHWX / TKHSX : 0.5 / 0.5 / 0.5 - > 0.5 / 0.6 / 0.6
Rev. 0.2
- Recommended DC operating condition is changed
Max VDIF-CLK : VDDQ+0.3 -> VDDQ+0.6
Rev. 0.3
- Correct typo
VDD -> VDDQ: in MODE CONTROL at page4
Draft Date
Dec. 2001
Oct. 2002
Remark
Advance
Advance
Jan. 2003
Sep. 2003
Advance
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.
Sep. 2003
-1-
Rev 0.3