K7D163674B Datasheet, PDF (1/16 Pages) Samsung semiconductor – 512Kx36 & 1Mx18 SRAM

K7D163674B
K7D161874B
512Kx36 & 1Mx18 SRAM
Document Title
16M DDR SYNCHRONOUS SRAM
Revision History
Rev No.
History
Rev. 0.0
Initial document.
Rev. 0.1
Change JTAG DC OPERATING CONDITONS/AC TEST CONDITIONS
-to support 1.8~2.5V VDD, change some items.
Rev. 0.2
Change DC CHARACTERISTICS (Stop Clock Standby Current)
-ISB1 : 100 -> 150
Rev. 0.3
Change JTAG Instruction Cording
- For Reserved
Rev. 1.0
Change DC CHARACTERISTICS (Increase Operating Current)
- x36 : add 40mA, x18 : add 60mA
Rev. 1.1
Add DC CHARACTERISTICS
- VIN-CLK, VDIF-CLK, VCM-CLK
Add AC INPUT CHARACTERISTICS
Add INPUT DEFINITION
Draft Data
Oct. 2003
Nov. 2003
Feb. 2004
Feb. 2004
Mar. 2004
Jan. 2004
Remark
Advance
Preliminary
Preliminary
Preliminary
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.
Rev 1.1
-1-
Jan. 2005