K7A403200M Datasheet, PDF (1/15 Pages) Samsung semiconductor – 128Kx32-Bit Synchronous Pipelined Burst SRAM

K7A403200M
128Kx32 Synchronous SRAM
Document Title
128Kx32-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No. History
1.0
Initial draft
2.0
change tCYC from 8.5ns to 10.0ns.
Modify Rev No. from 0.0 to 1.0.
3.0
Modify DC characteristics( Input Leakage Current test Conditions)
form VDD=VSS to VDD to Max.
4.0
Add VDDQ Supply voltage( 2.5V )
5.0
Remove 119BGA(7x17 Ball Grid Array Package) .
Draft Date
May . 19. 1998
June . 02. 1998
June. 08. 1998
Dec. 02. 1998
Feb. 10. 1999
Remark
Final
Final
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
February 1999
Rev 5.0