K7A321800M Datasheet, PDF (1/18 Pages) Samsung semiconductor – 1Mx36 & 2Mx18 Synchronous SRAM

K7A323600M
K7A321800M
1Mx36 & 2Mx18 Synchronous SRAM
Document Title
1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
History
Draft Date
Remark
0.0
1. Initial draft
May. 10. 2001 Advance
0.1
1. Add 165FBGA package
0.2
1. Update JTAG scan order
2. Speed bin merge.
From K7A3236(18)09M to K7A3236(18)00M.
3. AC parameter change.
tOH(min)/tHZC(min) from 0.8 to 1.5 at -25
tOH(min)/tHZC(min) from 1.0 to 1.5 at -22
tOH(min)/tHZC(min) from 1.0 to 1.5 at -20
Aug. 29. 2001 Preliminary
Dec. 31. 2001 Preliminary
0.3
1. Change pin out for 165FBGA
- x18/x36 ; 11B => from A to NC , 2R ==> from NC to A .
Feb. 14. 2002 Preliminary
0.4
1. Insert pin at JTAG scan order of 165FBGA in connection with pin out change Apr. 20. 2002 Preliminary
- x18/x36 ; insert Pin ID of 2R to BIT number of 69
0.5
1. Add Icc, Isb,Isb1 and Isb2 values
May.10. 2002 Preliminary
1.0
1. Correct the pin name of 100TQFP.
1.1
1. Add the Industrial temperature range.
Oct. 15. 2002 Final
Mar. 19, 2003 Final
1.2
1. Change the Stand-by current (Isb)
Before After
Isb - 25 : 120 170
- 22 : 110 160
- 20 : 100 150
- 16 : 90 140
- 15 : 90 140
- 14 : 90 140
Isb1 : 90 110
Isb2 : 80 100
Oct. 17, 2003 Final
2.0
1. Delete the 119BGA and 165FBGA package.
2. Delete the 225MHz, 167MHz and 150MHz speed bin
Nov. 18, 2003 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Nov. 2003
Rev 2.0