K6R1016C1C Datasheet, PDF (1/11 Pages) Samsung semiconductor – 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

K6R1016C1C-C/C-L, K6R1016C1C-I/C-P
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No.
History
CMOS SRAM
Draft Data
Remark
Rev. 0.0
Initial release with preliminary.
Aug. 5. 1998
Preliminary
Rev. 1.0
Relax DC characteristics.
Item
ICC
12ns
15ns
20ns
Previous
90mA
88mA
85mA
Changed
95mA
93mA
90mA
Sep. 7. 1998
Preliminary
Rev. 2.0
Rev. 2.1
Add 48-fine pitch BGA.
Changed device part name for FP-BGA.
Item
Previous
Symbol
Z
ex) K6R1016C1C-Z -> K6R1016C1C-F
Changed
F
Sep. 17. 1998
Nov. 5. 1998
Preliminary
Final
Rev. 2.2
Changed device ball name for FP-BGA.
Previous
I/O1 ~ I/O8
I/O9 ~ I/O16
Changed
I/O9 ~ I/O16
I/O1 ~ I/O8
Dec. 10. 1998
Final
Rev. 3.0
Rev. 3.1
Rev. 4.0
Added Data Retention Characteristics.
Add 10ns part.
Delete 20ns speed bin
Mar. 3. 1999
Mar. 3. 2000
Sep.24. 2001
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 4.0
September 2001