STM8360T Datasheet, PDF (8/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STM8360T
120
ID=-5.5A
100
80
60
125 C
75 C
40
25 C
20
0
0
2
4
6
8
10
-VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1200
Ciss
1000
800
600
400
200
0
0
Coss
Crss
5 10 15 20 25 30
-VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
20.0
25 C
10.0
5.0
125 C
75 C
1.0
0.4 0.6
0.8
1.0
1.2
1.4
-VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
VDS=-20V
ID=-5.5A
6
4
2
0
0 3 6 9 12 15 18 21 24
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
1000
100
10
TD(off )
Tf
Tr
TD(on)
VDS=-20V,ID=-1A
1 _VGS=-10V
1
3
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
100
10
R ^{DS(ON) Limit}
1
10us
100us
10m1sms
DC
0.1
VGS=-10V
Single Pulse
TA=25 C
0.1
1
10
40
-VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Nov,21,2008
8
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