STM8360T Datasheet, PDF (2/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STM8360T
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
4 Symbol _Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
40
V
1
uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS ^c
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^c
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=6.6A
VGS=4.5V , ID=5.3A
VDS=5V , ID=6.6A
VDS=20V,VGS=0V
f=1.0MHz
VDD=20V
ID=1A
VGS=10V
RGEN=3.3 ohm
VDS=20V,ID=6.6A,VGS=10V
VDS=20V,ID=6.6A,VGS=4.5V
VDS=20V,ID=6.6A,
VGS=10V
1.0 1.5
23
33
17
3
V
29 m ohm
45 m ohm
S
780
pF
60
pF
50
pF
14
ns
14
ns
18.5
ns
20
ns
14
nC
6.9
nC
1.8
nC
3.9
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Diode Forward Voltage ^b
VGS=0V,IS=1.7A
1.7
A
0.77 1.2
V
Nov,21,2008
2
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