STU314D Datasheet, PDF (7/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STU314D
P-Channel
30
VGS=-10V
25
20
VGS=-5V
VGS=-4.5V
VGS=-6V
VGS=-4V
15
VGS=-3.5V
10
5
VGS=-3V
0
0 0.5 1 1.5 2 2.5 3
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 1.0
15
12
9
T j=125 C
6
25 C -55 C
3
0
0 0.7 1.4 2.1 2.8 3.5 4.2
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
120
100
80
60
V GS =-4.5V
40
20
0
1
V GS =-10V
6
12
18
24
30
-ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.5
1.4
V G S =-4.5V
ID=-11A
1.3
1.2
1.1
V G S =-10V
ID =-14A
1.0
0.0
0
25 50
75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
1.2
V DS =V G S
ID=-250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Feb,04,2009
7
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