STU314D Datasheet, PDF (4/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STU314D
N-Channel
30
24
18
VGS=10V
VGS=5V
VGS=4.5V
VGS=4V
12
VGS=3.5V
6
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
66
55
44
V GS =4.5V
33
22
V GS =10V
11
1
1
6
12
18
24
30
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
15
12
9
T j=125 C
6
25 C
-55 C
3
0
0 0.7 1.4 2.1 2.8 3.5 4.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
1.8
1.6
V G S =10V
ID=16A
1.4
1.2
V G S =4.5V
1.0
I D =1 3 . 7 A
0
0
25 50 75 100 125 150
Tj, Junction Temperature(°C ) ^{Tj(°C )}
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
1.2
V DS =V G S
ID=250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Feb,04,2009
4
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