STM4472 Datasheet, PDF (5/7 Pages) SamHop Microelectronics Corp. – N- hannel nhancement Mode Field Effect Transistor

S TM4472
1200
1000
800
C is s
600
5
400
C oss
200
C rss
0
0
5
10 15
20
25 30
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
10
VDS =20V
8
ID=7A
6
4
2
0
0 2 4 6 8 10 12 14 16
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
250
100
60
10
TD(off)
Tr
Tf
TD(on)
V DS =20V ,ID=1A
1
V G S =10V
1
6 10
60 100 300 600
R g, G ate R es is tance (Ω)
F igure 11.s witching characteris tics
9
50
30
10
R ^{DS(ON) Limit}
1
10ms
100ms
1s
DC
0.1 VGS =10V
S ingle P ulse
0.03 ^{TA=25 C}
0.1
1
10 40
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10
100
1000
5