STM4472 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – N- hannel nhancement Mode Field Effect Transistor

S TM4472
S amHop Microelectronics C orp.
Jan.7 ,2008 ver1.0
N- Channel Enhancement Mode Field Effect _Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m ıΩ ) Max
40V
7A
24 @ VGS = 10V
30 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
S O-8
1
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
40
V
Gate-S ource Voltage
VGS
20
V
a
25 C
7
A
Drain C urrent-C ontinuous @ Ta
ID
70 C
5.9
A
-P ulsed ^b
IDM
28
A
Drain-S ource Diode Forward C urrent ^a
IS
1.7
A
Ta= 25 C
3
Maximum P ower Dissipation ^a
PD
W
Ta=70 C
2.1
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R JA
40
C /W
1