STUD802S Datasheet, PDF (4/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STU/D802S
60
ID=16A
50
40
125 C
30
75 C
25 C
20
10
0
0
2
4
6
8
10
VGS, Gate-Source Voltage (V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
3600
C is s
3000
2400
1800
1200
600
C rss
0
05
C oss
10 15
20 25 30
VDS, Drain-to Source Voltage (V)
Figure 9. Capacitance
Ver 1.0
60
125 C
10
75 C
25 C
1
0 0.25 0.50 0.75 1.00 1.25
VSD, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS =64V
8
ID=16A
6
4
2
0
0 8 16 24 32 40 48 56 64
Qg, Total Gate Charge (nC)
Figure 10. Gate Charge
600
100
60
TD(on)
10
Tr
TD(off)
Tf
1
V DS =40V ,ID=16A
V G S =10V
1
6 10
60 100 300 600
Rg, Gate Resistance (Ω)
Figure 11. Switching Characteristics
4
700
100
100us
10
V GS =10V
S ingle P ulse
1
Tc=25 C
0.1
1
10
100
VDS, Gate-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
Mar,31,2010
www.samhop.com.tw