STUD802S Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

Green
Product
STU/D802S
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
35 @ VGS=10V
80V
25A
50 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
STU SERIES
TO-252AA(D-PAK)
G
DS
STD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol
Parameter
Limit
V_DS
Drain-Source Voltage
80
V_GS
Gate-Source Voltage
±20
I_D
Drain Current-Continuous ^a
TA=25°C
25
I_DM
-Pulsed ^b
100
E_AS
Avalanche Energy ^c
196
P_D
Maximum Power Dissipation ^a TA=25°C
62.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case
2
R _JA
Thermal Resistance, Junction-to-Ambient
50
Units
V
V
A
A
mJ
W
°C
°C/W
°C/W
Mar,31,2010
1
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