STU313D Datasheet, PDF (4/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STU313D
N-Channel
35
VGS=10V
28
VGS=4.5V
VGS=5V
VGS=4V
21
VGS=3.5V
14
7
VGS=3V
0
0 0.5 1 1.5 2 2.5 3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 1.0
20
16
12
8
Tj=125 C ^{-55 C}
4
25 C
0
0 0.7 1.4 2.1 2.8 3.5 4.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
60
50
40
VGS=4.5V
30
20
VGS=10V
10
1
1
7
14
21
28
35
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
2.0
1.8
V G S =10V
1.6
ID=8A
1.4
1.2
V G S =4.5V
I D =6 . 5 A
1.0
0.8
0
25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
1.2
VDS=VGS
ID=250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Jul,30,2008
4
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