STU313D Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STU313D
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Ver 1.0
PRODUCT SUMMARY (N-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
30V
16A
24 @ VGS=10V
35 @ VGS=4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
-30V
-15A
33 @ VGS=-10V
52 @ VGS=-4.5V
D1/D2
S1
G1
S2 _G2
TO-252-4L
D1
D2
G1
G2
S 1 N-ch
S 2 P-ch
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
N-Channel P-Channel
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
30
-30
±20
±20
I_D
Drain Current-Continuous ^a
I_DM
-Pulsed ^b
TC=25°C
TC=70°C
16
-15
12.5
-11.5
45
-43
I _AS
E_AS
Sigle Pulse Avalanche Current ^d
Sigle Pulse Avalanche Energy ^d
L=0.5mH
7.5
5.0
14
6.3
P_D
Maximum Power Dissipation ^a
TC=25°C
T_C=70°C
10
6.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case ^a
12
R _JA
Thermal Resistance, Junction-to-Ambient ^a
60
Units
V
V
A
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jul,30,2008
www.samhop.com.tw