STM8206 Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – Dual N-Channel E nhancement Mode Field Effect Transistor

1.3
V DS =V G S
1.2
ID=250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0
25 50 75 100 125
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
30
25
20
15
10
5
V DS =5V
0
0
5 10 15
20 25
IDS , Drain-S ource C urrent (A)
F igure 7. T rans conductance V ariation
with Drain C urrent
5
VDS =10V
4 ID=1A
3
2
1
0
0 3 6 9 12 15 18 21 24
Qg, T otal G ate C harge (nC )
F igure 9. G ate C harge
4
S TM8206
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
20
10
T J=25 C
1
0.4 0.6 0.8 1.0 1.2 1.4
V S D, B ody Diode F orward V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
10
11
100m¹_s^0ms
1s
DC
0.1 ^{VGS =4.5V}
S ingle P ulse
0.03 ^{Tc=25 C}
0.1
1
10 20 50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area