STM8206 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Dual N-Channel E nhancement Mode Field Effect Transistor

S TM8206
S amHop Microelectronics C orp.
Nov 22, 2004 ver1.1
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
20V
7.5 A
20 @ VGS = 4.5V
30 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
D1 D1 D2 D2
8 7 65
S O-8
1
1 23 4
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
20
V
Gate-S ource Voltage
VGS
10
V
Drain C urrent-C ontinuous ^a @ TJ=25 C
ID
-Pulsed^b (300us Pulse Width)
IDM
7.5
A
37.5
A
Drain-S ource Diode Forward C urrent ^a
IS
1.7
A
Maximum P ower Dissipation ^a
PD
2
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R JA
62.5
C /W
1