STE336S Datasheet, PDF (4/6 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STE336S
30
ID=11A
25
20
15
10
125 C
75 C
5
25 C
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1800
1500
Ciss
1200
900
600
300
0
0
Coss
Crss
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
20.0
125 C
10.0
5.0
75 C
25 C
1.0
0
0.3
0.6
0.9
1.2
1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=15V
8
ID=11A
6
4
2
0
0 3 6 9 12 15 18 21 24
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
300
100
10
TD(off )
Tr
TD(on)
Tf
100
R ^{DS(ON) Limit}
10
1
10us
1m¹_s^00us
DC1^{1s001m0ms s}
VDS=15V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
VGS=10V
0.1 _{Single Pulse}
TA=25 C
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jan,31,2013
4
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