STE336S Datasheet, PDF (2/6 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STE336S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
30
V
1
uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS ^b
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^b
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=11A
VGS=4.5V , ID=8A
VDS=10V , ID=11A
VDS=15V,VGS=0V
f=1.0MHz
VDD=15V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=15V,ID=11A,VGS=10V
VDS=15V,ID=11A,VGS=4.5V
VDS=15V,ID=11A,
VGS=10V
1
1.8
3
V
4.7 5.9 m ohm
8.7 11.8 m ohm
26
S
1260
pF
244
pF
203
pF
23
ns
35
ns
64
ns
9
ns
21
nC
11
nC
2.3
nC
6.2
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=6A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
0.8 1.2
V
Jan,31,2013
2
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