STD12L01 Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STD12L01
420
ID=6A
350
280
125 C
210
75 C
140
25 C
70
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
900
750
Ciss
600
450
300
Coss
150
Crss
0
0
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20.0
10.0
5.0
125 C
75 C
25 C
Ver 1.3
1.0
0
0.25 0.50 0.75 1.00 1.25
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=50V
8 _ID=6A
6
4
2
0
0 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
300
80
100
TD(off )
TD(on)
Tr
10
Tf
VDS=50V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
10
1
0.1
0.1
VGS=10V
Single Pulse
TA=25 C
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Oct,29,2010
4
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