STBP80L60 Datasheet, PDF (4/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).

STB/P80L60
30
ID=40A
25
20
15
125 C
10
75 C
25 C
5
0
0
2
4
6
8
10
V G S , G ate- S ource Voltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
6000
5000
4000
Ciss
3000
2000
1000
Crss
0
0
5
Coss
10 15 20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
Ver 2.1
60
125 C
25 C
10
75 C
1
0 0.25 0.50 0.75 1.00 1.25
V S D, B ody Diode F orward V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
10
VDS =30V
8
ID=25A
6
4
2
0
0 8 16 24 32 40 48 56 64
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
1000
1000
100
TD(off )
Tr
TD(on)
Tf
10
VDS=30V,ID=1A
VGS=10V
1
1
10
100
R g, G ate R es is tance (_W)
F igure 11.s witching characteris tics
4
100
100us
10ms
10
VGS=10V
Single Pulse
TAC=25 C
1
0.1
1
10
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
Dec,14,2012
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