STBP80L60 Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).

STB/P80L60 ^Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 2.1
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Typ
60V
80A
8.0 @ VGS=10V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
S
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_C=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TC=25°C
TC=70°C
I_DM
-Pulsed ^b
E_AS
Single Pulse Avalanche Energy ^d
P_D
Maximum Power Dissipation ^a
TC=25°C
TC=70°C
T_J, T_STG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case ^a
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
60
±20
80
67
235
420
100
70
-55 to 175
1.5
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Dec,14,2012
www.samhop.com.tw