STBP70L60 Datasheet, PDF (4/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).

STB/P70L60
60
ID= 40A
50
40
30
125 C
20
10
75 C
25 C
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
4800
4000
Ciss
3200
2400
1600
800
Coss
Crss
0
0
5 10 15 20
25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 2.0
60
125 C
25 C
10
75 C
1
0
0.3 0.6
0.9
1.2
1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS =30V
8
ID=25A
6
4
2
0
0 6 12 18 24 30 36 42 48
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
100
10
TD(off )
TD(on)
Tr
Tf
VDS=30V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
800
100
R ^{DS(ON) Limit}
100us
1ms
DC^10ms
10
VGS=10V
1 _{Single Pulse}
TC=25 C
0.3
0.1
1
10
60
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Oct,17,2011
4
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