STBP70L60 Datasheet, PDF (3/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).

STB/P70L60
Ver 2.0
100
VGS =10V
80
60
VGS =7V
VGS =6V
40
VGS =5V
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
30
24
18
T j=125 C
12
-55 C
25 C
6
0
0.0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
30
25
20
15
V GS =10V
10
5
1
1
20
40
60
80 100
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
2.0
1.8
V G S =10V
ID=40A
1.6
1.4
1.2
1.0
0.8
0
25 50 75 100 125 150
Tj, Junction Temperature(°C ) ^{Tj(°C )}
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.4
ID=250uA
1.3
1.2
1.1
1.0
0.9
0.8
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Oct,17,2011
3
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