STB434S Datasheet, PDF (4/8 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level Enhancement Mode Field Effect Transistor

STB/P434S
30
ID=30A
25
20
125 C
15
10
75 C
25 C
5
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1800
1500
Ciss
1200
900
600
Coss
300
Crss
0
0
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
60
20
25 C
125 C
10
1
0 0.24 0.48 0.72 0.96 1.20
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
VDS=20V
ID=30A
6
4
2
0
0 3 6 9 12 18 21 24 27
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
1000
500
100
10
TD(off)
Tr
Tf
TD(on)
100
R ^{DS(ON) Limit}
10
100us
1ms
10ms
VDS=20V,ID=1A
1 _VGS=10V
1
3
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
V GS =10V
S ingle P ulse
1
T A=25 C
0.1
1
10
40 100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Nov,14,2008
4
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