STB434S Datasheet, PDF (2/8 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level Enhancement Mode Field Effect Transistor

STB/P434S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
40
V
1
uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS ^c
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^c
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=30A
VGS=4.5V , ID=25A
VDS=10V , ID=30A
VDS=20V,VGS=0V
f=1.0MHz
VDD=20V
ID=1A
VGS=10V
RGEN=3.3 ohm
VDS=20V,ID=30A,VGS=10V
VDS=20V,ID=30A,VGS=4.5V
VDS=20V,ID=30A,
VGS=10V
1.3 1.7
3
V
7.6 9.2 m ohm
8.8 11.5 m ohm
18
S
1160
pF
211
pF
135
pF
17
ns
24
ns
59
ns
11
ns
20
nC
10
nC
2.1
nC
5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Diode Forward Voltage ^b
VGS=0V,IS=10A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25^°C,L=0.5mH,VDD = 20V.(See Figure13)
10
A
0.84 1.3
V
Nov,14,2008
2
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