STB432S Datasheet, PDF (4/8 Pages) SamHop Microelectronics Corp. – N-Channel Logic Enhancement Mode Field Effect Transistor

STB/P432S
30
ID=30A
25
20
75 C
15
125 C
10
5
25 C
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
2400
2000
1600
C is s
1200
800
C oss
400
0 ^{C rss}
05
10 15
20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
20.0
10.0
5.0
125 C
75 C
25 C
1.0
0 0.24 0.48 0.72 0.96 1.2
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS =15V
8
ID=30A
6
4
2
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
220
100
60
10
T D(off)
Tr
T D(on)
Tf
V DS =15V ,ID=30A
1
V G S =10V
1
6 10
60 100 300 600
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
1000
100
R ^{DS(ON) Limit}
100us
10
V GS =10V
S ingle P ulse
1
Tc=25 C
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jun,24,2008
4
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