STB432S Datasheet, PDF (2/8 Pages) SamHop Microelectronics Corp. – N-Channel Logic Enhancement Mode Field Effect Transistor

STB/P432S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
4 _{Symbol Parameter}
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
IDSS
Zero Gate Voltage Drain Current
VDS=32V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
1
RDS(ON) Drain-Source On-State Resistance
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS ^c
VGS=10V , ID=30A
VGS=4.5V , ID=28A
VDS=10V , ID=30A
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^c
VDS=15V,VGS=0V
f=1.0MHz
tD(ON)
tr
tD(OFF)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD=15V
ID=30A
VGS=10V
RGEN=3.3 ohm
Qg
Total Gate Charge
VDS=15V,ID=30A,VGS=10V
VDS=15V,ID=28A,VGS=4.5V
Qgs
Gate-Source Charge
VDS=15V,ID=30A,
Qgd
Gate-Drain Charge
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS ^c
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Diode Forward Voltage
VGS=0V,IS=30A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25^°C,L=1.25mH,RG=25Ω,VDD = 20V.(See Figure13)
Typ
1.7
7
9
26
1600
280
150
20
21
45
16
32
15
3.5
7.3
0.95
Max Units
V
1
uA
±100 nA
3
V
9 m ohm
11 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
30
A
1.3
V
Jun,24,2008
2
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