SP2107 Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP2107
2.4
I D =0 . 6 A
2.0
1.6
125 C
1.2
75 C
0.8
25 C
0.4
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
240
210
Ciss
180
150
120
90
60
Coss
30 _Crss
0
0
5 10 15
20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
20
10
125 C
25 C
75 C
1
0
0.4 0.8 1.2 1.6 2.0
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=50V
8
ID=0.6A
6
4
2
0
0 0.7 1.4 2.1 2.8 3.5 4.2
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
300
100
10
TD(off )
Tf
Tr
TD(on)
VDS=50V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
10
100us
1
100m¹⁰_s ^ms
0.1
VGS=10V
Single Pulse
TA=25 C
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jul,11,2013
4
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