SP2107 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP2107
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Max
100V
1.2A
0.8 @ VGS=10V
0.93 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
PDFN 5x6
PIN1
D2 ⁵
D2 6
D1 7
D1 8
4 _G2
3 S2
2 G1
1 _S1
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
T_A=25°C
T_A=70°C
I_DM
-Pulsed ^b
E_AS
Single Pulse Avalanche Energy ^d
P_D
Maximum Power Dissipation ^a
T_A=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
1.2
1
5
2.25
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,11,2013
www.samhop.com.tw