SP2106 Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP2106
4.8
I D =0 . 5 A
4.0
3.2
125 C
2.4
1.6
75 C
25 C
0.8
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
90
75
60
45
30
15
0
0
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.1
20
10
25 C
125 C
75 C
1
0
0.7 1.4 2.1 2.8 3.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
6
4
2
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
10
1
R^{DS(ON) Limit} _100m¹⁰_s ms
100us
VDS=50V,ID=0.5A
VGS=10V
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
0.1
VGS=10V
Single Pulse
TA=25 C
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jul,18,2013
4
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