SP2106 Datasheet, PDF (3/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP2106
1.0
VGS=10V
0.8
VGS=4.5V
0.6
VGS=3.5V
0.4
VGS=3V
0.2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
3.6
3.0
2.4
V GS =4.5V
1.8
1.2
V GS =10V
0.6
0.1
0.01
0.2
0.4
0.6
0.8
1.0
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.1
1.0
0.8
0.6
Tj=125 C
0.4
25 C
-55 C
0.2
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.2
2.0
V G S =10V
I D =0 . 5 A
1.8
1.6
1.4
V G S =4.5V
1.2
I D =0 . 5 A
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
1.2
V DS =V G S
ID=250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=10mA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Jul,18,2013
3
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