STU408D Datasheet, PDF (3/7 Pages) SamHop Microelectronics Corp. – Dual N-Channel E nhancement Mode F ield E ffect Transistor

S TU408D
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS ^a
Diode Forward Voltage
VSD
VGS = 0V, Is = 8A
Min Typ Max Unit
0.94 1.3 V
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
30
V GS =4.5V
25
V GS =3.5V
20
V GS =10V
V GS =8V
15
10
V GS =3V
5
0
0 0.5 1 1.5 2 2.5 3
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
15
12
9
T j=125 C
6
25 C
3
-55 C
0
0 0.8 1.6 2.4 3.2 4.0 4.8
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
60
50
40
V GS =4.5V
30
20
V GS =10V
10
0
1
6
12
18
24
30
ID, Drain C urrent (A)
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
2.0
1.8
1.6
V G S =10V
ID=8A
1.4
1.2
1.0
V G S =4.5V
ID=6A
0.0
0
25 50 75 100 125 150
T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3