STU408D Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Dual N-Channel E nhancement Mode F ield E ffect Transistor

S amHop Microelectronics C orp.
S TU408D
J uly.25 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
30 @ VGS = 10V
40V
16A
40 @ V G S =4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO252-4L package.
E S D P rotected.
D1/D2
D1
D2
G1
G2
S1
G1
S2
G2
TO-252-4L
S 1 N-ch
S 2 N-ch
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
40
V
Gate-S ource Voltage
VGS
20
V
25 C
16
A
Drain C urrent-C ontinuous @ Ta
ID
70 C
13.8
A
-P ulsed ^a
IDM
50
A
Drain-S ource Diode Forward C urrent
IS
8
A
Ta= 25 C
11
Maximum P ower Dissipation
PD
W
Ta=70 C
7.7
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
13.6
C /W
Thermal R esistance, Junction-to-Ambient
R JA
120
C /W
1