STU312D Datasheet, PDF (3/11 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

S TU312D
P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ ^C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS ^a
BVDSS ^VGS =0V, ^ID =-250uA -30
IDSS
VDS =-24V, VGS =0V
IGSS
VGS ₌ 24V, VDS= 0V
V
-1 ^uA
100 uA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = -250uA -1 -1.7 -3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =-10V, ID= -6A
VGS =-4.5V, ID= -4A
27 34 m ohm
39 54 m ohm
On-S tate Drain Current
ID(ON) VDS = -5V, VGS = -10V -20
A
Forward Transconductance
g_FS
VDS = -10V, ID=-6A
10
S
DYNAMIC CHARACTERISTICS ^b
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
VDS =-15V, VGS = 0V
COSS
f =1.0MHZ
CRSS
800
PF
215
PF
120
PF
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
4
ohm
SWITCHING CHARACTERISTICS ^b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) _{VDD = -15V}
tr ^{ID = -1A}
tD(O F F )
VGS = -10V
R GEN = 6 ohm
tf
12
ns
18
ns
68
ns
38
ns
Total Gate Charge
Qg ^{VDS =-15V,ID =-20A,VGS =-10V}
15
nC
Gate-S ource Charge
Gate-Drain Charge
VDS=-15V,ID =-20A,VGS =-4.5V
7
nC
Qgs _{VDS =-15V, ID = -20 A}
Qgd ^{VGS =-10V}
1.3
nC
5
nC
3